Abstract
Recent results employing scanning tunneling microscope (STM)-based fabrication and characterization techniques on passivated semiconductor surfaces are reviewed. The preparation and characterization of silicon and gallium arsenide surfaces for STM patterning of ultrashallow oxide masks and the use of these masks in selective-area heteroepitaxy and reactive ion etching are discussed. Methods for performing meaningful spectroscopic characterization of GaAs surfaces and structures are considered. An ultrahigh vacuum STM system constructed in our laboratory specifically for lithographic process development is described.
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