Abstract
InAs is deposited on geometric patterned Si (001) substrate using metal-organic vapor-phase epitaxy. A high-aspect-ratio nanopattern (aspect ratio >3) with SiO2 as a mask is used. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction. For InAs merged above the SiO2 pattern region, coalescence dislocations are suppressed on top of the InAs/SiO2 interfaces using a 70-nm-wide SiO2 convex-top pattern. Compared with the full width at half maximum measurement from X-ray diffraction of InAs on a planar Si (001) substrate, that of InAs on a 70-nm-wide SiO2 convex-top patterned Si (001) substrate is reduced by 84.3%. The improvement in material quality is verified by transmission electron microscopy, Hall measurements, and X-ray diffraction studies.
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