Abstract
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress in speed and integration density [...]
Highlights
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress in speed and integration density [1]
Each of the seventeen articles collected in this special issue proposes a solution to a specific problem related to the above-mentioned major challenges
In addition to the research in transistors and memory devices, this issue has collected important research on solar cells based on ZnO/Si heterojunctions [13], Bi-doped and Bi-Er co-doped optical fibers [14], high-performance graphene electrolyte double-layer capacitors [15], quantum-dot and sample-grating semiconductor optical amplifiers [16], a transmission method to determine the complex conductivity of thin strips [17], and a high-efficiency CMOS power amplifier with a dual-switching transistor [18]
Summary
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress in speed and integration density [1]. The major issues, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become worse as the size of the silicon-based metal oxide semiconductor field effect transistors (MOSFETs) decreased to nanometers while the device integration density increased. High electron mobility transistors (HEMTs) based on wide bandgap semiconductors, such as silicon carbides (SiC) and gallium nitrides (GaN) [1], are proposed to enhance the carrier mobility for high-speed logic devices. The HEMTs are very attractive for high-power and high-frequency applications. Topological insulators that have insulating bulk and gapless surfaces have exhibited unique properties for transistor applications [2]
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