Abstract
Recent research trend of nano-electromechanical (NEM) nonvolatile memory technology has been reviewed. NEM memory cells are considered as alternative embedded nonvolatile memory cells because they have advantages of CMOS-compatible process, high packaging density, board space saving, low program / erase voltage, large sensing margin, low fabrication cost and short time-to-market. Since the first CMOS-compatible NEM nonvolatile memory cell was proposed, T cell has been proposed for 2-bit operation and H cell has been proposed for 4-bit operation.
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