Nanodomain Manipulation for Reduction of Bit Error Rate in Terabit/Inch2-Class Ferroelectric Data Storage

Abstract

Actual information data storage was studied using a data storage system based on scanning nonlinear dielectric microscopy. The bit error rates of the data recorded on a LiTaO3 single-crystal medium were evaluated. The data were written at the density of 403 Gbit/in.2 using a conductive-diamond-coated cantilever as a read/write probe. The tendencies of the bit errors were affected by the arrangement of the surrounding data bits. A writing method using bipolar pulses was discussed in order to decrease the bit error rate. The data with the highest recording density, 0.98 Tbit/in.2, were recorded by using a sharp cantilever. The bit error rate was decreased by a factor of four by adjusting the pulse amplitudes according to the bit arrangements.