Abstract
Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.
Highlights
The discovery of magnetic van der Waals layered materials has inspired tremendous research interest recently as they provide new opportunities for the development of magnetic nanodevices
It has been reported that the magnetic properties of van der Waals (vdW)-layered materials change significantly as their thickness reduces to atomically thin, and many of 2D vdW MLs appear to be promising for spintronics applications[1,2]
MBT monolayer (MBT-ML) was prepared on the Si (111) substrate in a so-called SL-by-SL manner by alternative growing quintuplelayer of Bi2Te3 and bilayer of MnTe in molecular beam epitaxy[33]
Summary
The discovery of magnetic van der Waals (vdW) layered materials has inspired tremendous research interest recently as they provide new opportunities for the development of magnetic nanodevices. We design several conceptual nanodevices of MBT-ML and mainly focus on its spin-polarized transport behaviors without SOC, which qualitatively retains its electronic transport properties based on a test (see Supplementary Fig. 1b).
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