Abstract
ABSTRACTNanofabrication on a hydrogen-terminated diamond surface is performed usingan atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm aresuccessfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed ofone side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).
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