Abstract
ABSTRACTNanofabrication on a hydrogen-terminated diamond surface is performed usingan atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm aresuccessfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed ofone side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
