Abstract
ZrO2 is a potential candidate for the realization of 3D capacitors on silicon for future Systems-on-Chip. This paper reports on the deposition of ZrO2 thin films by metal-organic chemical vapor deposition on planar and 3D structures. Physico-chemical as well as electrical properties of the films are investigated. It is shown that the change of phase and microstructure of the film due to annealing at 900°C under O2 impacts directly on the electrical performance of the capacitors. Capacitance densities are 2nF/mm2 for planar capacitors and reach 8nF/mm2 for capacitors with pores etched in silicon with a 4:1 aspect ratio.
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