Abstract
Abstract Cuprous selenide (Cu 2 Se) nanocrystalline thin films are grown onto electroless Cu coating on p-Si (100) substrates using electrochemical atomic layer deposition (EC-ALD), which includes alternate electrodeposition of Cu and Se atomic layers. The obtained films were characterized by X-ray diffraction (XRD), field emission scanning electronic microscopy (FE-SEM), FTIR, and open-circuit potential (OCP) studies. The results show the higher quality and good photoelectric properties of the Cu 2 Se film, suggesting that the combination of electroless coating and EC-ALD is an ideal method for deposition of compound semiconductor films on p-Si.
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