Abstract
AbstractFormation of nanocrystallites in the amorphous silicon carbide thin films deposited from silane methane mixture diluted in argon by plasma enhanced CVD has been studied under different levels of rf power density and Ar dilution. Systematic transformations between different polymorphic phases of SiC have been observed with changes in rf power and Ar dilution. At low Ar dilution no H‐SiC (α‐SiC) nanocrystallites was observed. Only traces of β‐SiC of Si were observed. With increase in Ar dilution formation of α‐SiC nanocrystallites was observed. Increase of rf power density at this dilution enhanced α‐SiC nanocrystallites but reduced β‐SiC slightly. Variation of SiC peak in the infra red absorption corresponds closely with the changes in β‐SiC nanocrystallites in the layers. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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