Abstract
Problem statement: The high quality of ZnS:Mn nanocrystals is important in nanotechnology industries. The perfect chemical procedure is significant to produce the best of nanocrystals. Hence, this research is concern on the good chemical method in processing manganese doped zinc sulphide nanocrystals. Approach: For the first step, Mn doped ZnS nanocrystals were synthesized by using sol gel spin coating method. After the crystals were obtained, the properties of ZnS:Mn2+ on morphology, optical and electrical were determined by using Field Emission Scanning Electron Microscopy (FE-SEM), Ultra Violet Visible Spectroscopy (UV-Vis), Photoluminescence Spectrophotometer (PL) and current-voltage measurement (I-V). Results: The particle has diameter size around 22 nm. In this experiment it was found that the current increases with the increasing of applied voltage (-10 V to 10 V). UV-Vis spectra shows appearance of an absorption peak at 250 nm meanwhile in PL analysis spectra, the sample has been recorded at room temperature and two emissions peaks at blue and orange emissions were observed. Conclusion: Manganese doped zinc sulphide was successfully synthesized using sol gel spin coating method and it performs in good quality. Key words: Sol gel, spin coating, zinc sulphide, manganese, optical, electrical
Highlights
Luminescing nanocrystalline semiconductors of Mn doped ZnS has attracted much attention due to their unique properties especially in optical and electrical part
We mainly focused on the optical and electrical properties of Mn doped ZnS nanocrystals synthesized via sol gel spin coating method
Optical properties: We show the basic characterization of this nanocrystals sample with a dopant concentration of x = 0.1% in term of Ultra Violet Visible Spectroscopy (UV-Vis) absorption/transmission spectra and photoluminescence spectra in Fig. 3 as well as Fig. 5
Summary
Luminescing nanocrystalline semiconductors of Mn doped ZnS has attracted much attention due to their unique properties especially in optical and electrical part. Because of these characteristics, this semiconductor which has wider band gap (3.68 eV) is possible to be applied in optoelectronic applications such as optical switches, sensors, electroluminescence devices, biomedical tags, nanophosphors (Monica and Lokendra, 2010; Murugadoss et al, 2011; Xiying et al, 2011). We mainly focused on the optical and electrical properties of Mn doped ZnS nanocrystals synthesized via sol gel spin coating method. Corresponding Author: Noor Azie Azura Mohd Arif, Centre of Pre-University, University Malaysia Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia 822
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