Abstract
This paper describes the formation of nanocrystalline tungsten oxide thin films by two-step thermal annealing of vacuum evaporated tungsten oxide films. The films were annealed at different temperatures to form semiconducting WO 3 films suitable for gas sensor and other electronic device applications. It was found that the film annealed at 300 °C have a uniform nanocrystalline structure compared with high temperature annealed films. When these nanocrystalline films were re-annealed in higher temperature region (>500 °C), no any variation of surface morphology and crystalline structure was observed. These experimental results indicated that stable nanocrystalline WO 3 films could be prepared by two-step annealing.
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