Abstract
This paper reports some results about intrinsic nanocrystalline silicon thin films deposited by radio frequency (RF) sputtering on p-type c-Si substrates at low temperature (fixed at 95 °C). Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD) and laser Raman spectrometer allowing the determination of the grain size and the crystalline volume fraction X c. XRD measurements showed that this film has a new microstructure, which is different from the films deposited by using other methods. The Raman shift of the film is also shown in the paper. In addition, the n-type nc-Si:H/p-type c-Si heterojunction solar cell, which has open circuit voltage ( V oc) of 370 mV and short circuit current intensity ( J sc) of 6.5 mA/cm 2, was obtained based on the nanocrystalline silicon thin film.
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