Abstract
Nanometer sized crystalline (nc) Si formation in the SiH 4 plasma cell with very-high-frequency (144 MHz) excitation has been investigated with the Ar and H 2 dilution method. The SiH 4 plasma cell is attached to the ultra-high-vacuum chamber. The crystalline Si is formed in the gas phase of the plasma cell by coalescence of radicals produced from SiH 4. The nc-Si is extracted out of the plasma cell through the orifice to the ultra-high-vacuum chamber. The deposition rate increases with Ar dilution and decreases with H 2 dilution. The average grain size decreases with H 2 dilution. The dependence of the deposition rate and the grain size on the dilution condition is discussed.
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