Abstract
The optical and photoluminescence (PL) properties of nanocrystalline silicon (nc-Si) dots fabricated by the pulse-modulated rf plasma-enhanced chemical vapor deposition of tetrachlorosilane, SiCl4 and H2 at low substrate temperatures of 120°C are investigated. The photoluminescence peak of the nc-Si dots formed by the pulse rf plasma shifts slightly to higher energy along with the enhancement of the intensity compared with the cw by adjusting the rf pulse duty ratio. The PL intensity is mostly determined by the size distributions of the as-deposited nc-Si dots. The spectroscopic ellipsometry study revealed that the thickness and volume fraction of the nc-Si systematically decreased with decreasing pulse duty ratio. The correlation among the volume fractions, number density, and photoluminescence properties are demonstrated for as-deposited nc-Si dots prepared by the cw and pulse-modulated rf plasmas.
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