Abstract
Nanocrystalline silicon (nc-Si) material is a potential candidate in photoluminescence and electroluminescence devices. So far, nc-Si thin films have had no applications in solar cells as intrinsic layers because of their non-photoconductive nature. In the present work, a new type of photoconductive nc-Si thin film has been developed by utilizing commercially compatible plasma enhanced chemical vapour deposition technique. Transmission electron micrographs of the new material gave evidence for the presence of scattered nanocrystallites of average size∽10 nm embedded in the hydrogenated amorphous silicon matrix. The photosensitivity of the nc-Si films is > 1×10 5. To test the viability of the new material in devices, a p–i–n solar cell has been fabricated using the nc-Si material of optical gap 1.89eV, as the intrinsic layer. The efficiency of this single junction solar cell in 8.7%.
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