Abstract
A novel technique for the fabrication of a nanocrystalline silicon carbide (SiC) thin film is introduced in this study. Thin layers of silicon carbide are successfully deposited on a porous silicon (PS) substrate via radio frequency magnetron sputtering. The PS skeleton acts as a template for the growth of SiC with the same morphology. To improve the PS stability as a template, an ultrathin layer of carbonized silicon is used to cover the entire PS surface via thermal carbonization. The structural results show that the annealing process at elevated temperatures induces crystallinity in amorphous as-deposited SiC. The optical results demonstrate an enhancement in porosity of the deposited SiC samples upon exposure to high annealing temperatures.
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