Abstract
Materials such as PbI2, HgI2 and PbO are widely used to fabricate flat panel X-ray imaging detector because of high X-ray stopping power (attenuation coefficient). In general, the stopping power (Z4/E3) depends on high atomic number (Z) of the material and energy (E) of the X-ray radiation. In the present study, high atomic numbered bismuth oxyiodides such as BiOI and Bi5O7I nanocrystals were synthesized using a novel process and used in the device fabrication. Thick films of both the samples were coated on the top of patterned metal electrode and interfaced with a source meter to readout the electrical variation for 3.2 s illumination of X-ray using 70 kV real-time dental X-ray imaging machine. The observed result reveals that, the sensitivity increases with the increase of Z value. Also the possibility of utilizing both the nanocrystalline bismuth oxyiodides for the low-dose X-ray detector was explored.
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