Abstract
In AlGaN/GaN HEMTs, electrical degradation occurs due to high-voltage stress operation which can be described by a critical voltage operation by which degradation starts to take place which is irreversible. Our investigation is on how electrical degradation occurs due to physical degradation in the device. In this work using Griffith's Equation and inverse piezo electric effect we have shown how physical degradation affects electrical properties of the device and we have also shown how cracks are generated in AlGaN epitaxial layer of the device.
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