Abstract
This paper is focused on the effect of the stabilizing component SiO2 on the type and concentration of active sites in SnO2/SiO2 nanocomposites compared with nanocrystalline SnO2. Previously, we found that SnO2/SiO2 nanocomposites show better sensor characteristics in CO detection (lower detection limit, higher sensor response, and shorter response time) compared to pure SnO2 in humid air conditions. Nanocomposites SnO2/SiO2 synthesized using the hydrothermal method were characterized by low temperature nitrogen adsorption, XRD, energy dispersive X-ray spectroscopy (EDX), thermo-programmed reduction with hydrogen (TPR-H2), IR-, and electron-paramagnetic resonance (EPR)-spectroscopy methods. The electrophysical properties of SnO2 and SnO2/SiO2 nanocomposites were studied depending on the oxygen partial pressure in the temperature range of 200–400 °C. The introduction of SiO2 results in an increase in the concentration of paramagnetic centers Sn3+ and the amount of surface hydroxyl groups and chemisorbed oxygen and leads to a decrease in the negative charge on chemisorbed oxygen species. The temperature dependences of the conductivity of SnO2 and SnO2/SiO2 nanocomposites are linearized in Mott coordinates, which may indicate the contribution of the hopping mechanism with a variable hopping distance over local states.
Highlights
IntroductionThe development of high-temperature sensors necessary for local monitoring of the concentration of toxic compounds in exhaust (flue) gases and atmospheric emissions requires the creation of new materials to be stable at high temperatures of 300–600 ◦ C
The development of high-temperature sensors necessary for local monitoring of the concentration of toxic compounds in exhaust gases and atmospheric emissions requires the creation of new materials to be stable at high temperatures of 300–600 ◦ C
SnO2 /SiO2 interface on the type and concentration of active sites in SnO2 /SiO2 nanocomposites compared with nanocrystalline SnO2
Summary
The development of high-temperature sensors necessary for local monitoring of the concentration of toxic compounds in exhaust (flue) gases and atmospheric emissions requires the creation of new materials to be stable at high temperatures of 300–600 ◦ C. These specific tasks imply a high ambient temperature, which determines the requirements primarily for the stability of materials. This distinguishes high-temperature sensors from other types of semiconductor sensors operating, for example, at room temperature [1,2,3].
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