Abstract
Nanocolumn InGaN/GaN quantum-well crystals were deposited on pillared and flat Sisubstrates. A unique flower structure was synthesized on the Si pillars. Vertically alignednanocolumn crystals were uniformly deposited on the flat Si substrate. Raman spectrameasurement shows the crystals are fully relaxed. Photoluminescence measurementindicates much stronger photoluminescence excited from the flower structure than thatfrom the crystals on the flat Si substrate. Reflectivity measurement demonstratesmuch lower reflectivity of the flower structure than that of the crystals on the flatsubstrate. Laser scanning confocal microscopy measurement indicates clear verticalphotoluminescence distributions of the flower structure. Optical microscopy images showthat there is a horizontal photoluminescence distribution on the pillared Si substrate andthe quantum-well flower structure emits much brighter light than the crystals on the flat Sisubstrate. The flower structure improves the surface geometrical structure and enhancesthe extraction efficiency much more than the crystals on the flat Si substrate.
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