Nanochannel-Directed Growth of Multi-Segment Nanowire Heterojunctions of Metallic Au1–xGex and Semiconducting Ge

Abstract

We report on the synthesis of multi-segment nanowire (NW) junctions of Au(1-x)Ge(x) and Ge inside the nanochannels of porous anodic aluminum oxide template. The one-dimensional heterostructures are grown with a low-temperature chemical vapor deposition process, assisted by electrodeposited Au nanowires (AuNWs). The Au-catalyzed vapor-liquid-solid growth process occurs simultaneously in multiple locations along the nanochannel, which leads to multi-segment Au(1-x)Ge(x)/Ge heterojunctions. The structures of the as-grown hybrid NWs, analyzed by using transmission electron microscopy and energy-dispersive X-ray spectroscopy elemental mapping, show clear compositional modulation with variable modulation period and controllable junction numbers. Remarkably, both GeNW and Au(1-x)Ge(x)NW segments are single crystalline with abrupt interfaces and good crystallographic coherences. The electronic and transport properties of individual NW junctions are measured by using a multi-probe scanning tunneling microscope, which confirms the semiconducting nature of Ge segments and the metallic behavior of Au(1-x)Ge(x) segments, respectively. The high yield of multiple segment NW junctions of a metal-semiconductor can facilitate the applications in nanoelectronics and optoelectronics that harness multiple functionalities of heterointerfaces.