Abstract
We have developed a simple and economic technique for synthesis of one-dimensional nanobelt structures of semiconductive oxides such as ZnO, SnO 2, In 2 O 3, CdO, Ga 2 O 3 and PbO 2. The as-synthesized oxide nanobelts are pure, structurally uniform, single crystalline and most of them free from dislocations; they have a rectangular-like cross-section with typical widths of 30–300 nanometers, width-to-thickness ratios of 5–10 and lengths of up to a few millimeters. The belt-like morphology appears to be a unique and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts are structurally and morphologically controlled and they are intrinsic semiconductors, providing a new system after carbon nanotubes for a systematic understanding on dimensionally confined transport phenomena in functional oxides. They are also ideal building blocks for fabrication of nanoscale devices based on the integrity of individual nanobelts.
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