Abstract
The structural and electronic properties of twisted bilayer graphene (TBG) on SiC(000) grown by Si flux-assisted molecular beam epitaxy were investigated using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy with nanometric spatial resolution. STM images revealed a wide distribution of twist angles between the two graphene layers. The electronic structure recorded in single TBG grains showed two closely-spaced Dirac π bands associated to the two stacked layers with respective twist angles in the range 1–3°. The renormalization of velocity predicted in previous theoretical calculations for small twist angles was not observed.
Highlights
Because the photon spot size was much smaller than the Twisted bilayer graphene (TBG) grains, we were able to measure the band structure close to the Dirac point of single TBG grains for small twist angles: no velocity renormalization occurred at 2.1° and 1.8° ± 0.6° twist angles
After correlated nanoARPES and nano core-level experiments[26], we showed that N grains only involve AB stacked multilayers while W grains mainly include TBG
We focus our attention on the W grains associated with TBG
Summary
The band structure including the Dirac cones oriented along the N and W directions is shown in Fig. 1(b) as a function of the azimuthal angle. A wide range of moiré periodicities was observed which implies a wide distribution of twist angles between graphene layers.
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