Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity

Abstract

ZnS nanoribbons (NRs) with controlled p-type doping were synthesized by using Sb as dopant. The p-type conductivity of the ZnS:Sb NRs could be tuned in a wide range of seven orders of magnitude by adjusting the Sb doping level. Nano-Schottky barrier diodes based on Al/p-ZnS NRs junctions exhibited excellent device performances with a high rectification ratio >107 and a small ideality factor of ∼1.22. The diodes also showed the potential as high-sensitive UV detectors. The p-ZnS NRs are expected to act as key building blocks in nano-optoelectronics.