Abstract
In this paper electrical and field emission properties of the randomly distributed copper, iron and nickel nanowires on GaAs substrate are presented. Semiconducting (GaAs) wafers, spin coated with thin polymeric films were irradiated with 50 MeV Li (+3) ions at a fluence of 8 × 10 7 ions/cm 2, followed by UV irradiation and chemically etching in aqueous NaOH (6N, at room temperature). The wires have been deposited potentiostatically into the pores of the track-etch polycarbonate membrane spin coated onto the GaAs substrate. The size, shape and morphology of the deposits are strongly dependent of the preparation conditions such as deposition potential, current density, electrolyte and etching conditions. Later, morphological, electrical and field emission properties of the so deposited nano-/micro-structures were studied.
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