Abstract
We studied the possibility of forming fine magnetic column arrays using electron beam (EB) drawing and ion milling for patterned media in future magnetic storage. We investigated the substrate influence on drawing of minimum pitch, the ion-milling property of magnetic material using the calixarene resist for future patterned media. In 30-keV-EB drawing, we formed near 25-nm-pitched dot arrays on PtCo magnetic and thin metals layers on glass substrate even though we could form 20-nm-pitched dot arrays. In ion milling for fine PtCo magnetic columns, we fabricated fine magnetic column arrays with a diameter of 20 to 100 nm and a space of 100 nm using 200 eV Ar ion milling, and proved that thin calixarene resist behaves as a mask. Furthermore, we also confirmed the nanometer-size effect of the magnetic column.
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