Abstract
The design, fabrication and experimental investigation of 22–25MHz fragmented-membrane MEM bulk lateral resonators (BLR) with 100nm air-gaps on thin (1 and 6μm) silicon-on-insulator (SOI) are reported. Quality factors as high as 120,000 and motional resistances of as little as 60kΩ are measured under vacuum at room temperature, with 12V DC bias and low AC power. The temperature influence on the resonance frequency and quality factor is studied and discussed between 80K and 320K. Significant quality factor increase and motional resistance reduction are reported at cryogenic temperature. The paper shows that high-quality factor MEM resonators can be integrated on partially depleted thin SOI, which can be a substrate of choice for the fabrication of future integrated hybrid MEMS–CMOS integrated circuits for communication applications.
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