Nano-Engineering by Implanting Al2O3 Nano Particle as Sandwiched Scattering Centers in Between the La0.5Pr0.2Sr0.3MnO3 Thin Film Layers

Abstract

We report the use of non-magnetic Al2O3 nano particles deposited between two ferromagnetic La0.5Pr0.2Sr0.3MnO3 (LPSMO) manganite layers with an aim to improve the electronic and magnetotransport properties of the layered supper lattice grown on single crystal STO(100) substrate using Pulsed Laser Deposition (PLD) technique. We studied the electronic-transport and magnetotransport properties of this system wherein Al2O3 particles are expected to act as insulating scattering centers between two ferromagnetic LPSMO layers. The scattering due to additional scattering centers (insulating Al2O3 nano particles) could be controlled by application of external field, resulting in high magnetoresistance (MR) approximately 72% as compared to pristine LPSMO film (MR approximately 51%) at temperature close to their T(M) values. In addition, incorporation of nanostructured Al2O3 barrier between the two ferromagnetic LPSMO layers results in a 2-3 fold increase in the values of temperature coefficient of resistance (TCR) and the field coefficient of resistance (FCR) as compared to pristine LPSMO film, suggesting the use of such nanoengineered manganite layered structure for better device application.