Abstract
AbstractThe prototype of a field-emission pressure sensor with a novel structure based on the quantum tunnel effect is designed and manufactured. Moreover the nano crystalline silicon film technology is introduced into the fabrication of the device effectively, which performs the function mostly as the field-emission material, the device field-emission characteristic of the nano silicon film is investigated, the experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5A/m2, when the exterior electric field is 5.6×105V/m.
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