Nano crystalline diamond MicroWave Chemical Vapor Deposition growth on three dimension structured silicon substrates at low temperature

Abstract

Nano crystalline diamond (NCD) films grown at a temperature below 400 °C can open new applications on temperature sensitive substrates such as polymers or low-melting point alloys. One requirement for the applicative use of NCD is the ability of depositing on a structured substrate having high aspect ratio. This work presents a study on the three dimensional (3D) conformity of NCD deposition at low temperature (350 °C) and low pressure (30 Pa). Silicon wafers have been structured using a mask-less photolithography and (hardmask-less) Deep Reactive Ion Etching (DRIE) process and seeded with nano-diamond particles. The NCD films were grown on these 3D patterned Si substrates with various trench geometries to provide means of determining the limiting geometries of this technique. By measuring the step coverage with changing trench width, a threshold for conformal NCD growth can be determined. The NCD films at the bottom of the 100 μm deep trenches were continuous down to an aspect ratio of 1:7.