Abstract
In ion irradiated GaSb, InSb and Ge, the induced point defects form voids and these voids develop to the cells by further irradiation. The nano-fabrication technique utilizing this behavior is performed on (100) InSb by focused Ga + ion beam (FIB). Fabrication of nano-cell lattices with cell an interval of 30–300 nm are tried varying the acceleration voltage and the ion dose at room temperature, and the plan views and the cross-sectional views of the nano-cell structures are observed by scanning electron microscopy (SEM). The possible ranges of the cell interval, the cell diameter and the cell height are obtained from the results.
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