Abstract
We present an analytical model describing the instability of the interface during anodization of p‐type resistive silicon in HF electrolyte, leading to porous silicon formation. Our analytical approximations are applicable to p‐type amorphous and crystalline silicon with resistivities in the range from about 0.1 to 10,000 Ωcm. For all kinds of p‐type silicon, nanopore formation is predicted to occur first, as it is governed by properties of the silicon/electrolyte barrier. Then, pores of increasing diameter are expected to grow, up to sizes of the order of a characteristic cutoff length. Structures above that size occur only when the resistivity of silicon is larger than that of the electrolyte. © 1999 The Electrochemical Society. All rights reserved.
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