Abstract
A pseudomorphic modulation-doped field effect transistor (MODFET) using a (InAs)3(GaAs)1 superlattice as a channel layer has been successfully demonstrated. The device was grown by molecular beam epitaxy. The MODFET with 0.85 μm gate length exhibits maximum external DC transconductance and current gain cut-off frequency of 475 mS/mm and 28.5 GHz, respectively.
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