Abstract
The oxygen content of GaAs single crystals grown under a protective B 2O 3 melt by the liquid encapsulation technique was determined by mass spectrometry, deuteron and neutron activation analysis and was found to be 10 19 –10 20 atoms cm -3. Crystals grown from the melt by other techniques as well as vapour- and solution-grown epitaxial layers were found to have concentrations of the same order of magnitude. An estimate from mass-spectrometric data yields an effective diffusion coefficient of oxygen in GaAs of D eff = 2 × 10 -3 exp (-1.1 eV.kT) cm 2 s -1 between 700 and 900°C.
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