Abstract
In the present study, Na2O doped CeO2 has been prepared by solid state reaction method. The prepared samples are characterized by X-ray diffraction (XRD), UV–Visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Scanning electron microscope (SEM) and Impedance spectroscopy. The optical band gap of all the samples lies in the semiconducting range i.e. 3.04–3.25 eV. The highest optical band gap is observed for 5 mol% Na2O doped CeO2. The SEM images show a non-uniform distribution of particles with an average particle size of ∼3.15 μm for all the samples. The lowest dielectric constant is observed to be ∼11 at 100 °C and 100 Hz for 10 mol% doped CeO2 which is lower than the undoped CeO2. The conductivity of the samples lies in the range of 10−7 S/cm at 700 °C.
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