Abstract
We report on polycrystalline double-layer NaWO3 thin films in a two-terminal device configuration showing resistive switching (RS) based on the neuronal ion Na+ for biomimetic applications. A top NayWO3 layer functions as a Na+ reservoir, enabling fast Na+ ion intercalation into a bottom NaxWO3 layer with x < y, giving good resistance control for analog processing. Operando Raman measurements show Na+ activation under 0.5 V and the electrical characterization proves that the switching is linked to the motion of Na+. The switching mechanism is investigated thoroughly by studying different film layer combinations. The observed RS performance can be explained by the change of electron emission/hopping site energy levels upon Na+ intercalation. The presented devices based on biocompatible materials constitute a promising route towards an analog processing building block for emulating neuronal ion channels for emerging biomimetic and potentially biomedical applications, as well as for flexible electronics.
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