Abstract
Indium-gallium-zinc oxide thin film transistor(IGZO-TFT) was fabricated using N2O plasma treated SiNx film as gate insulator and room-temperature deposited IGZO film as active layer.Comparing with the conventional IGZO-TFT,the saturation mobility increased from 4.5 to 8.1 cm2·V-1·s-1,threshold voltage reduced from 11.5 to 3.2 V,threshold swing varied from 1.25 to 0.9 V/dec.The trap states in the N2O plasma treated IGZO-TFT is obviously smaller than that in the conventional IGZO-TFT.Our results indicate that using N2O plasma treated SiNx film as gate insulator is an effective approach for improving IGZO-TFT performance.
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