N-Type ion gel gated vertical organic electrochemical transistors based on benzodifurandione-based Oligo(p-phenylene vinylene)s

Abstract

Organic electrochemical transistors (OECTs) using aqueous gate dielectrics have garnered significant interest for bioelectronic applications. However, their viability for long-term use in neuromorphic computing and synaptic devices is limited due to their short-term functionality. In this study, we synthesize two benzodifurandione-based oligo (p-phenylene vinylene) polymers, BDOPV-TCNVT and ClBDOPV-TCNVT, and investigate their electrochemical transistor properties using quasi-solid-state ion gel-gated vertical OECTs (v-OECTs). Compared to BDOPV-TCNVT, the chlorinated ClBDOPV-TCNVT demonstrates lower frontier molecular orbitals and easier electrochemical doping. The higher volumetric capacitance of as-spun ClBDOPV-TCNVT (1.94 F cm−3) compared to as-spun BDOPV-TCNVT films (1.49 F cm−3) is mainly attributed to the easier ion infiltration resulting from its lower crystallinity with mixed chain orientation. The quasi-solid-state v-OECTs based on both polymers (as-spun) exhibit transconductance (gm) of 0.06–0.08 mS. Following thermal treatments, the gm gradually decreases for both polymers due to enhanced edge-on ordering with tight interchain packing, hindering ion penetration. Despite the poor electrochemical doping by quasi-solid-state ion gel gated dielectrics, the enlarged area and decreased channel length in v-OECTs (compared to parallel OECTs) can enhance the gm. Further optimization of v-OECTs requires tailored material designs specifically suited for efficient vertical charge transport together with ion infiltration.