Abstract
In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal–insulator-semiconductor field-effect transistor devices.
Highlights
Novel, quasi one-dimensional structures, like III-V semiconductor nanowires, may act as key elements in future nanoscaled optoelectronic devices [1,2,3]
The doping mechanism through side facet deposition, reported in various publications [14,23], can be excluded. This enables a separate investigation of vapor–liquid solid (VLS)-grown GaAs nanowires
We have found the relatively small process window (0.04 ≤ IV/III ≤ 0.08) for the successful n-type doping of VLS-grown GaAs nanowires with high charge carrier densities using TESn
Summary
Quasi one-dimensional structures, like III-V semiconductor nanowires, may act as key elements in future nanoscaled optoelectronic devices [1,2,3]. There are only a very few publications describing initial doping results of III-V compound semiconductor nanowires with a high charge carrier density. N-type doping of GaAs nanowires grown by VLS using two different precursor materials, ditertiarybutylsilane (DitBuSi) and tetraethyl tin (TESn), is reported.
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