Abstract
n-type conductivity was observed in thin films of BN deposited by microwave plasma-assisted chemical vapour deposition using a single-source organometallic precursor. The depositions were carried out on various substrates using N2 as the carrier gas. These films were characterized by FTIR, XRD and SEM which revealed the presence of crystallites of boron nitride. The deposition conditions were optimized to obtain the maximum concentration of c-BN in the thin films of boron nitride. Seebeck studies indicate that electrons are the majority charge carriers. I-V studies of the p-n junction between p-Si and n-BN indicate typical behaviour of diode characteristics.
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