N-Type conducting P doped ZnO thin films via chemical vapor deposition.

Donglei Zhao,Claire J Carmalt,Sanjayan Sathasivam,Jianwei Li

doi:10.1039/d0ra05667g

Donglei Zhao, Claire J Carmalt + Show 2 more

Open Access

https://doi.org/10.1039/d0ra05667g

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Abstract

Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substrates via aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10−3 Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase. Fitting of the diffraction data to a Le Bail model also showed a general expansion of the ZnO unit cell upon doping due to the substitution of Zn2+ ions with the larger P5+.

Highlights

Transparent conducting oxides (TCOs) are important materials that are widely used in optoelectronic devices such as solar cells, touchscreens, screen displays, LCD panels and OLEDs.[1,2,3,4]
The most widely used TCO material is tin doped indium oxide (ITO), for example, 90% of the global display market is based on ITO transparent electrodes.[2,3,7,9,10]
Other semiconductor materials like SnO2 and ZnO have been investigated as potential replacements

Summary

Introduction

Transparent conducting oxides (TCOs) are important materials that are widely used in optoelectronic devices such as solar cells, touchscreens, screen displays, LCD panels and OLEDs.[1,2,3,4] TCOs combine the seemingly orthogonal properties of high transmittance to the visible wavelengths (>80%) with low electrical resistivity (3.1 eV) semiconductors and carrier concentrations in the 1020 cmÀ3 order or above due to intrinsic and/or extrinsic point defects.[1,5,6,7,8]. Hall effect measurements were used to calculate the electrical properties including bulk concentration (n), carrier mobility (m) and resistivity (r) via the van der Pauw method with a permanent magnet (0.58 T) and a constant current (1 mA)

Results and discussion

40 This study

Conclusion