Abstract
The character of the electronic charge carriers under various conditions in chromium (III) oxide was investigated using Seebeck measurements on sintered compacts of in the temperature range 800–1800 K. The compacts were prepared by various sintering procedures. Depending on the pretreatment of the compacts, n‐ or p‐type materials were obtained. p‐Type material resulted after sintering in an atmosphere with a high oxygen partial pressure. Sintering in an atmosphere with low oxygen partial pressure, however gave n‐type material. This n‐type behavior could be frozen in by cooling the compacts below 1100 K. These experimental results provide evidence for Cr interstitials being the predominating point defects in at low oxygen partial pressure.
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