Abstract
All white LEDs that largely contribute to the energy saving as well as high electron mobility transistors (HEMTs) powering the base stations of cellular phone networks are made from only Ga-polar materials epitaxially grown along the c-axis. N-polar material, which has the opposite crystal-direction, is considered having high potential for expanding the application field. In this paper, the present status of N-polar epitaxial growth in our lab. is reviewed. Especially, the growth mechanism of N-polar GaN on the widely used sapphire substrate is investigated in detail by using transmission electron microscopy. Finally, as device applications, solar cells, red LEDs, and inverted HEMT are described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
