Abstract
ITO/InP photodetectors and electroluminescent diodes have been fabricated spraying a ITO layer onto a single crystal p InP. The results of electrical and interface characterizations agree with a model of a buried homojunction. The maximum quantum efficiency reaches 0.9. The electroluminescence is correlated to the recombination on the acceptors in the p InP, the emitted light at 1.34 eV for a direct current of 0.1 A is 0.67 mW.
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