Abstract
Rf sputtered Ti/Pt/Au Schottky contacts with varying titanium thickness have been made on ( n)GaAs by the lift-off process under actual device processing conditions. The ideality factor of the Schottky barrier is dose to unity (∼ 1.07) with a barrier height of 0.80 ± 0.02 eV. The contacts with Ti films as thin as 100 Å remain thermally stable with annealing up to 400°C. These contacts have been next used to fabricate submicron gate length GaAs MESFETs. The MESFET's g m increases with improved gate diode ideality but is not a strong function of it. The effect of Schottky gate annealing on the MESFET's dc characteristics shows that I DSS, g m, V p and V R(GS) remain stable with annealing upto 350°C and degrade with 400° anneal.
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