Abstract
N-face double heterostructures (DHs) composed of 30-nm-thick InN layers sandwiched with GaN buffer and cap layers were grown by metalorganic vapor phase epitaxy. A high InN growth temperature is necessary for obtaining good radiative properties in the temperature range from 595 to 675 °C. Using a lower growth temperature for the GaN cap layer (550 °C) than for the InN layer (675 °C) enables us to fabricate a high-quality N-face GaN/InN/GaN DH having abrupt heterointerfaces as well as strong band-edge photoluminescence at around 0.75 eV at the measurement temperature of 83 K.
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