Abstract
In this work, anatase N-doped TiO2 was prepared by a facile pre-sintering method. The usage of N-doped TiO2 not only improved the electrical performance of the electron transport layer, but prevented high-temperature sintering of the substrate. As a result, the devices with N-doped TiO2 exhibited higher average power conversion efficiency of 16.65%. Furthermore, N-doped TiO2 was used in flexible devices, and high performance of flexible perovskite solar cells with power conversion efficiency of 14.52% was achieved. Consequently, the preparation of N-doped TiO2 could be a promising method for boosting the development of flexible perovskite solar cells.
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