Abstract

n-CuInS2 photoanode has been prepared by spray pyrolysis onto SnO2 deposited glass substrate at 350°C. The conductivity type of the photoanode was tested by hot-probe method and was ofn type. The conductivity of the photoanode was of the order of 2–4Θ−1cm−1 and was measured by using four-probe method. The effect of etching (HCl:HNO3 = 5:1 by volume) on photoanode properties has been studied. The best cell had the following parameters:V oc = 0·29V,I sc = 5·33 mA/cm2,ff = 0·571 and η = 1·275%.

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