N-Channel MOSFETs With Embedded Silicon–Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy

Abstract

In this letter, we report the use of a novel cluster-carbon (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sub> H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sub</sub> of ~ 1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSAT</sub> comparison shows a 15% I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DSAT</sub> enhancement for n-FETs with embedded Si:C S/D at an I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> = 1 nA/mum despite a slightly higher series resistance.